MRAM Magnetoresistive Random Access Memory

Two scientists who put the ‘nano’ in iPod Nano have been awarded a 2007 Nobel Prize.

Albert Fert of France and Peter Gruenberg of Germany discovered the giant magnetoresistive effect, or spintronics, simultaneously and independently in 1988. It uses the spin of the electron to store and transport information instead of the electrical charge, meaning much more information could be kept in a smaller space than before.

The technology allowed the development of handheld devices such as iPod music players and mobile phones that function like little computers.

What is MRAM Magnetoresistive Random Access Memory?
MRAM is a non-volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies, notably Flash RAM and DRAM kept MRAM in a niche role in the market, but its proponents believe that the advantages are so overwhelming that MRAM will eventually become dominant. Wikipedia MRAM

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